PART |
Description |
Maker |
HY5TQ1G431ZNFP-H8 HY5TQ1G431ZNFP-H7 HY5TQ1G431ZNFP |
256M X 4 DDR DRAM, 0.255 ns, PBGA82 FBGA-82 256M X 4 DDR DRAM, 0.225 ns, PBGA82 FBGA-82 64M X 16 DDR DRAM, 0.3 ns, PBGA100 64M X 16 DDR DRAM, 0.255 ns, PBGA100
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
HY5DU121622BT-D4 HY5DU12822BT HY5DU12822BTP-H HY5D |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 DDR SDRAM - 512Mb 64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
HY5DU121622ALT-D4 HY5DU121622ALT-M HY5DU12422AT HY |
DDR SDRAM - 512Mb 64M X 8 DDR DRAM, 0.7 ns, PDSO66 32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
MT46V32M16P-5BLF MT46V32M16P-5BFTR MT46V32M16P-5BL |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 64M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 512Mb: x4, x8, x16 DDR SDRAM Features 128M X 4 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
HY5DV641622AT-5 |
64M(4Mx16) DDR SDRAM 4M X 16 DDR DRAM, 0.5 ns, PDSO66
|
Hynix Semiconductor, Inc.
|
MT8VDDT3232UG-75XX MT8VDDT12832UY-75XX MT8VDDT6432 |
32M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 DIMM-100 128M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 LEAD FREE, DIMM-100 64M X 32 DDR DRAM MODULE, 0.75 ns, DMA100
|
Lattice Semiconductor, Corp.
|
HYMD264G726DLF8N-D43 HYMD264G726DLF8N-J HYMD264G72 |
64M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184 DDR SDRAM - Registered DIMM 512MB
|
Hynix Semiconductor, Inc.
|
EBD52EC8AKFA-5C EBD52EC8AKFA-5 EBD52EC8AKFA-5B |
512MB Unbuffered DDR SDRAM DIMM (64M words x 72 bits, 2 Ranks) 64M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 Circular Connector; No. of Contacts:55; Series:MS27484; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:16; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:16-35 RoHS Compliant: No
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
H5MS1G62MFP-L3M |
64M X 16 DDR DRAM, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
HY5DU56422CLF-J |
64M X 4 DDR DRAM, 0.7 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM 64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
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